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3 Articles

Evaluation of GaN Transistors Having Two Different Gate-Lengths for Class-S PA Design: Jun-Chul Park, Chan-Sei Yoo, Dongsu Kim, Woo-Sung Lee, Jong-Gwan Yook; J. Electromagn. Eng. Sci. 2014;14(3):284-292.; DOI: https://doi.org/10.5515/JKIEES.2014.14.3.284
Crossref 1; PDF

GaN HEMT Based High Power and High Efficiency Doherty Amplifiers with Digital Pre-Distortion Correction for WiBro Applications: Jun-Chul Park, Dong-Su Kim, Chan-Sei Yoo, Woo-Sung Lee, Jong-Gwan Yook, Sang-Hyun Chun, Jong-Heon Kim, Cheol-Koo Hahn; J. Electromagn. Eng. Sci. 2011;11(1):16-26.; DOI: https://doi.org/10.5515/JKIEES.2011.11.1.016
Crossref 4; PDF

A Wireless Identification System Using an Efficient Antenna Based on Passive Surface Acoustic Wave(SAW) Devices: Ki-Hun Chang, Woo-Sung Lee, Young-Joong Yoon, Jae-Kwon Kim, Joo-Yong Park, Jin-Wook Burm; J. Electromagn. Eng. Sci. 2007;7(1):12-16.; DOI: https://doi.org/10.5515/JKIEES.2007.7.1.012; PDF

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